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Advance Information
1.9 GHz CDMA Upmixer/Exciter
The MRFIC1854A is an integrated upmixer and exciter amplifier designed specifically for PCS CDMA digital cellular radios. The exciter amplifier incorporates a temperature compensated linear gain control and selectable bias to reduce power consumption. The design utilizes Motorola's RF BiCMOS1 process to yield superior performance in a cost effective monolithic device.
MRFIC1854A
1.9 GHz CDMA UPMIXER/EXCITER
SEMICONDUCTOR TECHNICAL DATA
* * * * * *
Total Supply Current CDMA Mode = 55 mA Typical 65 dB Dynamic Range Gain Control Upmixer Output IP3 = 6.0 dBm Typical Exciter Output IP3 = 22 dBm Typical Supply Voltage Range = 2.7 to 3.6 V Adjacent Channel Power (ACPR) @ 1.25 MHz Offset (Pout = 3.0 dBm) = -58 dBc Typical
1 (Scale 2:1) 20
PLASTIC PACKAGE CASE 948M (TSSOP-20EP, Tape & Reel Only)
PIN CONNECTIONS
IF In+ Enable1 LO In
1 2 3 4 5 6 7 8 9
20 IF In- 19 VCC4 18 RF Out+ 17 RF Out- 16 Gnd 15 Gnd 14 Gnd 13 Exciter In 12 VCC2 11 Enable2 (Top View)
Simplified Block Diagram
IF Vcntrl LO
Bias Select IF Vcntrl VCC3 Gnd
LO Buffer IF In+ IF In- Exciter Out RF Out+ RF Out- Exciter In
VCC1 RF Vcntrl
Exciter Out 10
Bias
Gain Control
ORDERING INFORMATION
Bias Select RF Vcntrl Device This device contains 305 active transistors. Operating Temp Range Package
MRFIC1854AR2 TA = -40 to 85C TSSOP-20EP
(c) Motorola, Inc. 2000
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Rev 0
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
1
MRFIC1854A
MAXIMUM RATINGS
Rating Supply Voltage IF Input LO Input Operating Temperature Storage Temperature Symbol VCC IF In+, IF In- LO TA Tstg Value 5.0 10 10 -40 to 85 -65 to 150 Unit V dBm dBm C C
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 50 V and Machine Model (MM) 40 V. This device is rated Moisture Sensitivity Level (MSL) 4. ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Characteristic Supply Voltage RF Frequency Range IF Frequency Range LO Frequency Range Gain Control Voltage Range Symbol VCC fRF fIF fLO IF Vcntrl, RF Vcntrl Min 2.7 1700 70 1500 0.1 Typ - - - - - Max 3.6 2000 250 2100 1.7 Unit V MHz MHz MHz V
ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, PLO = -13 dBm @ 2010 MHz, PIF = -27 dBm (differential) @ 130 MHz,
VEnable1 = VEnable2 = 2.4 V, TA = -40 to 85C, Test Circuit in Figure 1, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit
CASCADE PERFORMANCE (Filter included between RF Out and Exciter input. Filter insertion loss is 4.0 dB) Output Power Vctrl = 1.7 V Vctrl = 1.3 V Dynamic Range (Vctrl = 0.1 to 1.7 V) Adjacent Channel Power @ 1.25 MHz Offset High Current (Bias Select = 0.4 V, Pout = 3.0 dBm (set by Vctrl) ) Supply Current High Current (Bias Select = 0.4 V) Low Current (Bias Select = 2.4 V) MIXER SECTION Conversion Gain Noise Figure Output Third Order Intercept Point IF AGC Dynamic Range EXCITER SECTION Gain (No Attenuation) Noise Figure Output Third Order Intercept Point RF AGC Dynamic Range G NF OIP3 DRRF - - - 25 24 5.0 22 38 - - - - dB dB dBm dB GC NF OIP3 DRIF - - - 25 16 12 6.0 38 - - - - dB dB dBm dB Pout 3.0 2.0 DR ACPR -52 ICC - - 55 35 80 50 -58 - mA 50 5.0 3.8 65 - - - dB dBc dBm
2
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
MRFIC1854A
PIN FUNCTION DESCRIPTION
Pin 1 2 3 4 Function IF In+ Enable 1 (See Table 1) LO In Bias Select Description Mixer IF input pin. Input impedance is 500 . Enable pin. A logic High (>2.4 V) enables entire chip and Low (<0.4 V) disables chip. Mixer LO input pin. Bias select pin. Logic Low (<0.4 V) selects higher current bias for increased linearity and output power. High (>2.4 V) selects lower bias for reduced current consumption. IF AGC gain control pin. A 30 dB dynamic range can be acheived by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). Supply Voltage. Ground connection. Supply Voltage RF AGC control pin. A 30 dB dynamic range can be acheived by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). RF exciter amplifier output pin. Tx Enable pin. A logic High (>2.4 V) enables Tx path and Low (<0.4 V) disables Tx path except LO Buffer. Supply Voltage RF exciter amplifier input pin. Ground connection. Ground connection. Ground connection. Mixer RF output pin. Mixer RF output pin. Supply Voltage Mixer IF input pin. Input impedance is 500 . 2.7 to 3.6 -33 dBm (Typ) 0.1 to 1.7 Voltage On (V) -33 dBm (Typ) 2.4 to 3.6 -13 dBm (Typ) 0 to 0.4 Voltage Off (V)
5
IF AGC Control Voltage VCC3 Gnd VCC1 RF AGC Control Voltage Exciter Out Enable 2 (See Table 1) VCC2 Exciter In Gnd Gnd Gnd RF Out- RF Out+ VCC4 IF In-
6 7 8 9
2.7 to 3.6 - 2.7 to 3.6 0.1 to 1.7
10 11 12 13 14 15 16 17 18 19 20
- 2.4 to 3.6 2.7 to 3.6 - - - - 0 to 0.4
Table 1. Enable Truth Table
Enable 1 0 0 1 1 Enable 2 0 1 0 1 Disabled Not Applicable Standby Mode: Disables mixer/exciter, except LO buffer Tx Enabled Mode
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
3
MRFIC1854A
Figure 1. Application Circuit
C1 IF In+ C2 Enable 1 LO In C3 Bias Select IF Vcntrl VCC3 C4 VCC1 C6 RF Vcntrl C11 C8 Exciter Out L2 VCC Exciter C9 C10 Tx Enable C12 C7 T2 C5 T1 2 3 4 5 6 7 8 9 10 Exciter RF AGC LO Buffer IF AGC Mixer 20 19 18 17 16 15 14 13 12 11 C20 VCC2 T5 C13 Exciter In L3 T4 C15 T3 RF Out C14 C18 VCC4 C17 C16 L1 L4 C19 IF In-
C1, C19 C2, C18 C3 C4, C6, C9, C12, C16 C5, C8, C10, C11, C13, C15, C17 C7 C14 C20
1.0 nF 4.7 pF 1.7 pF 10 nF 30 pF 47 pF 3.6 pF 1.0 pF
L1, L4 L2 L3 T1 T2 T3 T4 T5
220 nH 10 nH 18 nH 50 Microstrip, L = 670 mils 50 Microstrip, L = 150 mils 50 Microstrip, L = 400 mils 50 Stripline, L = /2 @ 1880 MHz 50 Microstrip, L = 350 mils
NOTES: 1. IF ports matched to 50 for testing purposes. 2. Microstrip line and C7 form part of RF AGC/Exciter interstage match. 3. Er = 4.45 and board thickness = 18 mils.
4
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
MRFIC1854A
Figure 2. Gain versus Frequency (Low Current Mode)
33 32.5 32 GAIN (dB) 31.5 -40C 31 30.5 30 29.5 1850 1860 1870 1880 1890 85C VCC = 2.7 V Vcntl = 1.7 V Pin = -27 dBm 1900 1910 GAIN (dB) TA = 25C 38 37 36 35 34 33 32 1850 85C 1860 1870 1880 1890 1900 1910 VCC = 2.7 V Vcntl = 1.7 V Pin = -27 dBm TA = -40C 25C
Figure 3. Gain versus Frequency (High Current Mode)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 4. Gain versus LO Power (Low Current Mode)
34 25C 32 30 GAIN (dB) 28 26 24 22 -18 VCC = 2.7 V Vcntl = 1.7 V fLO = 2010 MHz -16 -14 -12 -10 -8.0 -40C GAIN (dB) TA = 85C 38 36 40
Figure 5. Gain versus LO Power (High Current Mode)
TA = -40C
25C 34 32 85C 30 28 -18 VCC = 2.7 V Vcntl = 1.7 V fLO = 2010 MHz -14 -12 -10 -8.0
-16
PLO, LO POWER (dBm)
PLO, LO POWER (dBm)
Figure 6. LO Feedthrough versus Control Voltage (Low Current Mode)
-10 -15 LO FEEDTHROUGH (dBm) -20 -25 -30 -35 -40 -45 -50 -55 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 VCC = 2.7 V PLO= -13 dBm fLO = 2010 MHz 1.4 1.6 1.8 85C 25C TA = -40C LO FEEDTHROUGH (dBm) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 0
Figure 7. LO Feedthrough versus Control Voltage (High Current Mode)
TA = -40C 25C 85C
VCC = 2.7 V PLO = -13 dBm fLO = 2010 MHz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Vcntrl, CONTROL VOLTAGE (V)
Vcntrl, CONTROL VOLTAGE (V)
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
5
MRFIC1854A
Figure 8. Output Power versus Control Voltage (Low Current Mode)
10 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 0 -10 -20 -30 -40 -50 -60 -70 0 0.2 0.4 0.6 0.8 1.0 1.2 VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz 1.4 1.6 1.8 TA = 85C 25C & -40C 20 10 0 -10 -20 -30 -40 -50 -60 -70 0 0.2 0.4 0.6 0.8 1.0 1.2 VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz 1.4 1.6 1.8 TA = 85C 25C & -40C
Figure 9. Output Power versus Control Voltage (High Current Mode)
Vcntrl, CONTROL VOLTAGE (V)
Vcntrl, CONTROL VOLTAGE (V)
Figure 10. Adjacent Channel Power versus Control Voltage (High Current Mode)
-40 ACPR, ADJACENT CHANNEL POWER @ 1.25 MHz OFFSET (dBm) -45 -50 -55 -60 85C -65 -70 25C VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz TA = -40C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Vcntrl, CONTROL VOLTAGE (V)
6
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
MRFIC1854A
APPLICATION INFORMATION
Design Philosophy The MRFIC1854A has three operating states, enable, standby, and disable. These states are controlled by the truth table shown in Table 1. The device is fully operational during the enable state and the bias level can be selected. A high bias current for maximum power CDMA or a lower bias current for CDMA at lower powers can be selected via the Bias Select pin. In the high current CDMA mode, the quiescent current is increased to maximize the linearity of the device. In the lower current bias state, the quiescent current is reduced to save current during lower power CDMA operation. The standby mode can be used to reduce current consumption during Voice Activity Factoring. In the standby mode, the LO buffer remains on to prevent VCO pulling and the bandgap reference bias circuit remains on to assure rapid device turn on. Current consumption in standby mode is 10 mA typical. The disable mode is used to turn the MRFIC1854A completely off. Leakage current in this mode is only a few microamps. The mixer is a double-balanced "Gilbert-cell" design with a balanced LO buffer amplifier. The input and output of the mixer are differential. The IF AGC is a differential amplifier that uses the "current steering" method for gain control. The IF AGC/mixer combination has 16 dB of gain and typically draws 20 mA quiescent current in the CDMA mode. An external filter is required between the mixer and RF AGC amplifier to reduce RX band noise. Figure 1 shows the applications circuit for the MRFIC1854A. In this circuit, the IF ports of the IF AGC have been matched to 50 for testing purposes. In the actual application, the differential IF ports of the mixer would be impedance matched to an IF SAW filter. The differential impedance of the IF ports is 1600 ohms. The RF output of the mixer is configured as a differential output. A stripline balun is used to convert the RF output to single ended. DC current to the open collector output of the mixer is provided by inductor, L3 (18 nH) and transmission line, T4. Transmission lines T3 and T4, and capacitors C15 (30 pF) and C14 (3.6 pF) form the balun/output match for the mixer. The RF AGC amplifier is a single-ended cascode design employing the standard "current steering" method of gain control. It's ground is brought out through pin number 15 so inductance can be added to degenerate the gain for a lower noise floor. The maximum gain is around 13 dB. It typically draws 9.0 mA quiescent current in CDMA mode. The RF Vcntrl signal is buffered with an on-chip OpAmp then preconditioned with temperature compensation and dB/V linearization before being applied to the RF AGC amplifier. Transmission line T2 and capacitor C7 (47 pF) are for the interstage match between the RF AGC and the exciter amplifier. The exciter amplifier is a simple common emitter design. It is grounded directly to the exposed pad which results in 12 dB of gain. It typically draws 24 mA bias current in CDMA. Inductor L2 (10 nH), capacitor C8 (30 pF), and C10 (30 pF) provide the output matching. L2 also provides a DC current path for the open collector output. Noise Power Considerations In CDMA systems, the handset is required to dynamically adjust its output power to specific levels. This requires a dynamic range of as much as 90 dB from the transmitter. Another key performance specification in CDMA systems is the output noise power, both in band and out of band. Noise power specifications has caused the noise figure of the transmitter to become an important system consideration. The cascaded noise figure of the transmitter can be analyzed with the same equation used in receiver analysis. The only difference is the noise source is from the transmitter (modulator) instead of the atmosphere.
Noise Source Gain = Noise Figure = G1 NF1 G2 NF2 NF 2 G3 NF3
NF
cascaded
+ NF1 )
*1
G1
)
NF 3
*1
G 1G 2
This equation above shows that the cascaded noise figure is better if the gain is higher and the noise figure is lower for the stages close to the noise source. For this reason, it is advantageous to implement some of the gain control of a CDMA transmitter in the RF section. The MRFIC1854A integrates a RF AGC amplifier after the upmixer to improve the overall noise figure of the transmitter.
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
7
MRFIC1854A
AAAAA A A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA AA A
f S11 S21 S12 S22 (MHz) 1700 1725 1750 1775 1800 1825 1850 1875 1900 1925 1950 1975 2000 S11
Table 2. Scattering Parameters for Exciter Amplifier (VDD = 2.7 V, TA = 25C, RF Vcntrl = 1.8 V, 50 System)
S21
6
6
S12
6
S22 0.219 0.222 0.223 0.237 0.248 0.271 0.278 0.298 0.308 0.324 0.335 0.346 0.350
6
0.319 0.315 0.310 0.309 0.304 0.294 0.286 0.274 0.261 0.249 0.242 0.233 0.225
-121.64 -123.78 -126.93 -130.34 -132.64 -137.08 -139.92 -141.87 -143.08 -145.61 -146.86 -148.86 -149.74
15.566 16.291 16.975 17.590 17.834 17.944 17.871 17.591 17.141 16.374 15.738 15.046 14.132
84.09 76.55 68.23 56.64 47.84 35.98 26.91 17.93 9.25 -1.69 -9.57
0.00476 0.00415 0.00406 0.00336 0.00406 0.00268 0.00411 0.00286 0.00351 0.00447 0.00322 0.00411 0.00490
-139.21 -126.71 -143.61 -143.09 -144.41 -141.85 -127.38 -132.49 -136.62 -139.69 -153.09 -139.41 -139.12
-12.29 -24.12 -35.58 -51.49 -64.80 -82.53 -94.74
-104.71 -114.83 -128.42 -137.57 -146.12 -155.24
-17.01 -26.57
8
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
MRFIC1854A
AAAAA A A AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A A A A
f IF In+ IF In- f RF Out (Pin 17) (MHz) 70 80 90 S11
Table 3. Scattering Parameters for Upmixer (VDD = 2.7 V, TA = 25C, IF Vcntrl = 1.8 V, 50 System)
6
S11
6
(MHz) 1700 1725 1750 1775 1800 1825 1850 1875 1900 1925 1950 1975 2000
S11
6
0.830 0.828 0.826 0.826 0.822 0.821 0.821 0.818 0.818 0.818 0.817 0.815 0.815 0.813 0.815 0.812 0.811 0.812 0.810
-2.07 -2.73 -3.01 -3.21 -3.57 -3.74 -3.93 -4.25 -4.54 -4.61 -4.85 -5.12 -5.26 -5.45 -5.71 -5.82 -6.38 -6.54 -6.76
0.832 0.830 0.828 0.827 0.825 0.823 0.823 0.820 0.821 0.820 0.819 0.819 0.819 0.816 0.818 0.816 0.817 0.814 0.815
-2.24 -2.71 -2.95 -3.22 -3.67 -3.93 -4.08 -4.42 -4.57 -4.76 -5.06 -5.29 -5.50 -5.76 -6.15 -6.13 -6.54 -6.72 -6.98
0.815 0.814 0.814 0.817 0.820 0.823 0.825 0.826 0.825 0.815 0.807 0.794 0.782
-55.16 -55.65 -56.29 -56.98 -57.45 -58.68 -59.57 -60.85 -62.07 -63.81 -64.79 -65.64 -66.58
100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 f
AAAAA A A A A AA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA A AA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AA A A AA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAA A A AA A AA A
LO In f LO In f LO In (MHz) 1500 1525 1550 1575 1600 1625 1650 1675 1700 S11
6
(MHz) 1725 1750 1775 1800 1825 1850 1875 1900 1925
S11
6
(MHz) 1950 1975 2000 2025 2050 2075 2100
S11
6
0.708 0.704 0.702 0.696 0.694 0.691 0.688 0.691 0.681
-47.83 -48.38 -49.02 -49.55 -50.11 -50.83 -51.47 -52.18 -53.42
0.677 0.670 0.654 0.641 0.636 0.631 0.630 0.626 0.622
-54.36 -55.34 -56.33 -56.34 -56.65 -56.59 -57.04 -57.38 -57.84
0.624 0.623 0.612 0.605 0.599 0.592 0.588
-58.20 -59.40 -60.59 -61.04 -61.70 -62.19 -62.99
MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA
9
MRFIC1854A
OUTLINE DIMENSIONS
PLASTIC PACKAGE CASE 948M-01 (TSSOP-20EP) ISSUE O
20X
b REF 0.10
M
0.20 C B A
CB
S
A
S
2X
E/2
20
11
E
EXPOSED THERMAL PAD (BOTTOM SURFACE) PIN 1 IDENTIFICATION 1 10
P1
E1
0.20 C B A
P D
B A
NOTES: 1 DIMENSIONS ARE IN MILLIMETERS. 2 INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3 DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. 4 DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5 DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6 TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7 DIMENSIONS D AND E1 ARE TO BE DETERMINED AT DATUM PLANE H. MILLIMETERS MIN MAX --- 1.20 0.00 0.10 0.19 0.30 0.19 0.25 0.09 0.20 0.09 0.16 6.40 6.60 6.40 BSC 4.30 4.50 0.65 BSC 0.50 0.75 --- 4.80 --- 3.00 0.27 0.37 0_ 8_
0.10 C
GAUGE PLANE
A A1 e R DETAIL E H
PARTING LINE
c
N 0.25 c1 c N L DETAIL E
b b1
DIM A A1 b b1 c c1 D E E1 e L P P1 R
q
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HOME PAGE: http://www.motorola.com/semiconductors/
10
CCCC EE CCCC EE CCCC EE
SECTION N-N
q
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334
MRFIC1854A/D MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA


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